rev. b1 nov.200 7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 t0 3 -2 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 2a,6 5 0v (type) , r ds(on) (max 5 )@v gs =10v ultra-low gate charge(typical 9.0 nc) fast switching capability 100%avalanche tested isolation voltage ( v iso = 40 00v ac ) maximum junction temperature range(1 50 ) general description this power mosfet is produced using winsemi s advanced planar stripe, v dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch mode power supply. absolute maximum ratings symbol parameter value units v dss drain source voltage 6 5 0 v i d continuous drain current(@tc=25 ) 2 * a continuous drain current(@tc=100 ) 2.5 * a i dm drain current pulsed (note1) 16 * a v gs gate to source voltage 30 v e as single pulsed avalanche energy ( note 2) 240 mj e ar repetitive avalanche energy ( note 1) 10 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=25 ) 23 w derating factor above 25 0.26 w/ t j, t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 300 *drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 5.5 /w r qcs thermal resistance, case-to-sink 0.5 - - /w g g g g d d d d s s s s to220f to220f to220f to220f
2 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance r qja thermal resistance, junction-to-ambient - - 62.5 /w
3 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical characteristics (tc = 25 c) characteristics symbol test condition min typ . max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 10 0 n a gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 600 v, v gs = 0 v - - 10 a v ds = 480 v, tc = 125 c - - 100 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 6 0 0 650 - v break voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d = 250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 1 a - 4.2 5 ? forward transconductance gfs v ds = 50 v, i d = 1 a - 2. 0 5 - s input capacitance c iss v ds = 25 v, v gs = 0 v , f = 1 mhz - 38 0 49 0 pf reverse transfer capacitance c rss - 35 49 output capacitance c oss - 7.6 9.9 switching time rise time t r v dd =30 0 v, i d = 2 a r g =25 ? (note4,5) - 1 5 42 ns turn ? on time t on - 50 108 fall time t f - 4 0 89 turn ? off time t off - 40 89 total gate charge (gate ? source plus gate ? drain) q g v dd = 32 0 v, v gs = 10 v, i d = 2 a (note4,5) - 15 19 nc gate ? source charg e q gs - 1. 7 - gate ? drain ( miller ) charg e q gd - 7 . 2 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 2 a pulse drain reverse current i drp - - - 6 a forward voltage (diode) v dsf i dr = 2 a, v gs = 0 v - - 1. 4 v reverse recovery time t rr i dr = 2 a, v gs = 0 v, di dr / dt = 100 a / s - 20 0 - n s reverse recovery charge q rr - 1.3 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 0.5 mh,i as =2. 0 a,v dd =50v,r g =0 ,starting t j =25 3.i sd 2. 0 a,di/dt 200a/us, v dd 4 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig. 1 on- state characteristics fig.2 transfer current characteristics fig. 3 on-resistance variation vs drain current fig. 5 on-resistance variation vs junction temperature fig.4 fig.4 fig.4 fig.4 body body body body diode diode diode diode forward forward forward forward voltage voltage voltage voltage variation variation variation variation vs. vs. vs. vs. source source source source current current current current and and and and temperature temperature temperature temperature fig. 6 gate charge characteristics
5 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig. 7 maximum safe operation area fig. 9 transient thermal response curve fig. 8 maximum drain current vs case temperature
6 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.1 0 gate test circuit & waveform fig.1 1 resistive switching test circuit & waveform fig.1 2 unclamped inductive switching test circuit & waveform
7 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.1 3 peak diode recovery dv/dt test circuit & waveform
8 /7 w w w w f f f f f f f f 2n60 2n60 2n60 2n60 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance to-220f to-220f to-220f to-220f package package package package dimension dimension dimension dimension unit: mm
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